Description
IRF630 200V 9A N-Channel Power MOSFET
IRF630 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Features:-
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Compliant to RoHS directive 2002/95/EC
- 175℃ operating temperature
- Product: IRF630
- Transistor type: MOSFET
- Control channel: N-Channel
- No of pins: 3
- Package: TO-220AB
- Mounting type: through hole
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 9A |
| Drain-Source Resistance (Rds On) | 0.4Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 43 NC |
| Operating Temperature Range | -55 - 150°C |
| Power Dissipation (Pd) | 74W |