IRF630 200V 9A N-Channel Power MOSFET

SKU: 1138500
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IRF630 200V 9A N-Channel Power MOSFET

IRF630 third-generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.


  •  Dynamic dv/dt rating
  •  Repetitive avalanche rated
  •  Fast switching
  •  Ease of paralleling
  •  Simple drive requirements
  • Compliant to RoHS directive 2002/95/EC
  • 175℃ operating temperature
  • Product: IRF630
  • Transistor type: MOSFET
  • Control channel: N-Channel
  • No of pins: 3
  • Package: TO-220AB
  • Mounting type: through hole

Detailed Specifications:-

Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 200V
Continuous Drain Current (Id) 9A
Drain-Source Resistance (Rds On) 0.4Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 43 NC
Operating Temperature Range -55 - 150°C
Power Dissipation (Pd) 74W

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