BD139 General Purpose BJT NPN Transistor of TO-126 Package
BD139 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
|Collector−Emitter Voltage (VCEO)||80V|
|Collector−Base Voltage (VCBO)||80V|
|Continuous Collector Current (Ic)||1.5A|
|Continuous Base Current (Ib)||0.5A|
|DC Current Gain (hFE)||40-250|
|Operating Temperature Range||-65 - 150°C|
|Power Dissipation (Pd)||12.5W|
|Thermal Resistance (ΘJA)||100°C/W|
|Thermal Resistance (ΘJC)||10°C/W|
* Product Images are shown for illustrative purposes only and may differ from actual product.
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