Description
BD139 General Purpose BJT NPN Transistor of TO-126 Package
BD139 is a three-layer NPN or PNP device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
Features:-
- Low saturation voltage
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
- Easy to carry and handle
Detailed Specifications:-
| Transistor Polarity | NPN |
| Collector−Emitter Voltage (VCEO) | 80V |
| Collector−Base Voltage (VCBO) | 80V |
| Continuous Collector Current (Ic) | 1.5A |
| Continuous Base Current (Ib) | 0.5A |
| DC Current Gain (hFE) | 40-250 |
| Operating Temperature Range | -65 - 150°C |
| Power Dissipation (Pd) | 12.5W |
| Thermal Resistance (ΘJA) | 100°C/W |
| Thermal Resistance (ΘJC) | 10°C/W |
* Product Images are shown for illustrative purposes only and may differ from actual product.