Description
GP19NC60KD IGBT Transistor | TO-220 600V 19A High-Speed Power Switching Device
The GP19NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) housed in a TO-220 package. Designed for high-efficiency power switching, it combines the fast switching capability of a MOSFET with the high current and low saturation voltage of a bipolar transistor.
This IGBT is widely used in inverters, motor control circuits, induction heating, SMPS (Switch Mode Power Supplies), and high-frequency power converters.
Features:
-
Low saturation voltage (V<sub>CE(sat)</sub>) for efficient performance
-
Fast switching and low switching loss
-
High voltage and current rating (600V / 19A)
-
Robust TO-220 package for easy mounting and heat dissipation
-
Ideal for use in high-efficiency power circuits
Technical Specifications:
| Parameter | Specification |
|---|---|
| Model | GP19NC60KD |
| Type | NPT IGBT |
| Package | TO-220 |
| Collector-Emitter Voltage (V<sub>CE</sub>) | 600V |
| Continuous Collector Current (I<sub>C</sub>) | 19A |
| Gate-Emitter Voltage (V<sub>GE</sub>) | ±20V |
| Power Dissipation | 100W (typical) |
| Operating Temperature | -55°C to +150°C |
| Mounting Type | Through Hole |
| Application | Power Inverter, Motor Driver, SMPS, Power Amplifier |
Applications:
-
Power Inverters
-
Motor Drives and Controls
-
SMPS and UPS Systems
-
Induction Heating Circuits
-
Welding Machines
-
Power Conversion Units