Description
H20R1203 H20R 1203 IGBT Power Transistor - 20A / 1200V - (Original)
- Powerful monolithic body diode with low forward voltage designed for soft commutation only
- very tight parameter distribution
- high ruggedness,temperature stable behavior
- lowVCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
- LowEMI
- Qualified according to JEDEC for target applications
- Pb-free lead plating; ROHS complaint
- Collector-emitter voltage VCE: 1200 V
- DC collector current,limited by Tvjmax IC: 40A at 25°C and 20A at 100°C
- Gate-emitter voltage / Transient Gate-emitter voltage, ) VGE :±20 to ±25volt
- VCEsat :1.48V at 25°C
- Tvjmax :175°C
Applications:
- Inductive cooking
- Inverterized microwave ovens
- Resonant converters
- Softs witching applications
- Electronics Projects
* Image shown is a representation only.