Description
IRF540 100V 33A N-Channel Power MOSFET
The IRF540N (TO-220-3) MOSFET from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on-resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET is well known to provide extremely efficiency and reliability which can be used in wide variety of applications.
Features:
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On Resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
Specification-
| Package/Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Product Series |
IRF540 |
| No. of Output |
1 |
| Output Type |
Analog Voltage |
| Polarity |
N-Channel |
| Dimensions in mm (LxWxH) |
10 x 4.4 x 15.65 |
| Vds - Drain-Source Breakdown Voltage |
100 V |
| Id - Continuous Drain Current |
33 A |
| Rds On - Drain-Source Resistance |
44 mOhms |
| Vgs - Gate-Source Voltage |
20 V |
| Qg - Gate Charge |
47.3 nC |
| Pd - Power Dissipation |
140 W |
| Shipment Weight |
0.008 kg |
| Shipment Dimensions |
8 × 6 × 2 cm |