IRFZ44N N-Channel Power MOSFET
Features of IRFZ44N N Channel Power MOSFET:
- Continuous Drain Current : 49 A
- Pulsed Drain Current : 160 A
- Power Dissipation : 94 watt
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
IRFZ44N is an advanced HEXFET Power MOSFETs which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
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