Description
N-Channel MOSFET SOT-23 30V 5.2A
This N-Channel MOSFET from is a high-efficiency switching transistor designed for low-voltage, high-current applications. With a compact SOT-23 package and a low RDS(on) value of 27mΩ at 4.5V, this MOSFET offers excellent performance, reduced heat generation, and high reliability.
Suitable for battery-powered electronics, DC-DC converters, LED drivers, load switching, and various embedded systems, it provides exceptional efficiency with low gate charge and a wide operating temperature range.
Key Features
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High Current Capability: Handles up to 5.2A continuous drain current
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Low RDS(on): 27mΩ at VGS = 4.5V for efficient operation
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30V Drain-Source Rating suitable for a wide range of designs
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Compact SOT-23 package ideal for space-limited circuits
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Logic-Level Gate Drive with 0.85V threshold
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Low Gate Charge for fast and efficient switching
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ROHS Compliant for modern electronic manufacturing
Technical Specifications
| Specification | Value |
|---|---|
| Package | SOT-23 |
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 30V |
| Continuous Drain Current (ID) | 5.2A |
| RDS(on) | 27mΩ @ 4.5V, 5A |
| Power Dissipation | 1W |
| Gate Threshold Voltage | 0.85V |
| Input Capacitance (Ciss) | 927pF @ 15V |
| Reverse Transfer Capacitance (Crss) | 61pF @ 15V |
| Gate Charge (Qg) | 11.7nC @ 4.5V |
| Operating Temperature | -55°C to +150°C |
| Type | N-Channel MOSFET |
| RoHS | Yes |
Applications
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DC-DC power converters
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Battery-operated devices
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LED driving circuits
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Motor control modules
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Power management systems
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Embedded electronics
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Robotics and DIY projects
Precautions
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Use proper ESD handling procedures
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Do not exceed maximum voltage/current ratings
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Provide heat dissipation when used near load limits
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Ensure PCB matches SOT-23 footprint
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Avoid short-circuit conditions during testing