Description
Transistor L14F1 Photodarlington
| Mounting Type | Through Hole |
| Collector to Emitter Breakdown Voltage | 25 V |
| Collector to Base Breakdown Voltage | 25 V |
| Emitter to Base Breakdwon Voltage | 12 V |
| On-State Collector Current | 7.5 mA |
| Reception Angle | ±8° |
| Operating Temperature Range | -65°C to +125°C |
| Transistor Polarity | NPN |
| Non Sensitivity @ mW/cm² | 3.4mA @ 200µW / cm² |
It is an L14F1 Photodarlington. This a silicon Photodarlington that is mounted on a narrow-angle. The Photodarlington is hermetically sealed.